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Proceedings Paper

Post-etch LER performance of novel surface conditioner solutions
Author(s): P. Zhang; M. Jaramillo; S. Cassel; T. Wallow; A. Acheta; A. R. Pawloski; S. Bell; R. H. Kim
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Paper Abstract

As line edge roughness (LER) becomes one of the critical lithography challenges, there is a growing interest in applying surface conditioner solutions during post-develop process to reduce LER. In this paper, we evaluated the combined effect of surface conditioners and hard bake on the post-develop LER. There is about 1nm LER reduction, as well as a significant improvement on the common process window for LER. No negative impact on CD process window was observed with the new process. In addition, preliminary etch data showed that surface conditioners have no negative impact on pattern transfer through etch.

Paper Details

Date Published: 29 March 2006
PDF: 5 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533Y (29 March 2006); doi: 10.1117/12.656648
Show Author Affiliations
P. Zhang, Air Products and Chemicals, Inc. (United States)
M. Jaramillo, Air Products and Chemicals, Inc. (United States)
S. Cassel, Air Products and Chemicals, Inc. (United States)
T. Wallow, AMD (United States)
A. Acheta, AMD (United States)
A. R. Pawloski, AMD (United States)
S. Bell, AMD (United States)
R. H. Kim, AMD (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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