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Proceedings Paper

Process development and resist modification for metal trench layers from 65nm to 45nm nodes
Author(s): Steven Wu; Sho-Shen Lee; Chun-Chi Yu; Benjamin Lin; Cheng Bai Xu; Yasuhiro Suzuki; Stewart Robertson; Tsutomu Tanaka; I-Yuan Wan
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Paper Abstract

A combination of simulation, resist modification and process optimization were used to develop production worthy dry 193nm lithography processes, suitable for the metal trench layers of 65nm node logic devices. The important performance characteristics of a back-end metal trench layer are through-pitch proximity bias, lithographic latitude and ultimate resolution. Simulation results suggested that a moderate annular illumination setting balances proximity bias against resolution at the forbidden pitch, yielding a good overall through-pitch common process window. Resist material optimization through resin, PAG (photo-acid generator) and base quencher modification improves proximity bias and results in excellent lithographic performances of good LER (line edge roughness), low MEF (Mask Error Factor) and wider process latitude. To investigate extendibility to 45nm node applications, the immersion compatibility of the optimized resist with several top coats are reported.

Paper Details

Date Published: 29 March 2006
PDF: 14 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615334 (29 March 2006); doi: 10.1117/12.656640
Show Author Affiliations
Steven Wu, United Microelectronics Corp. (Taiwan)
Sho-Shen Lee, United Microelectronics Corp. (Taiwan)
Chun-Chi Yu, United Microelectronics Corp. (Taiwan)
Benjamin Lin, United Microelectronics Corp. (Taiwan)
Cheng Bai Xu, Rohm and Haas Electronic Materials (United States)
Yasuhiro Suzuki, Rohm and Haas Electronic Materials (United States)
Stewart Robertson, Rohm and Haas Electronic Materials (United States)
Tsutomu Tanaka, Rohm and Haas Electronic Materials (United States)
I-Yuan Wan, Rohm and Haas Electronic Materials (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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