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Proceedings Paper

Debris characterization and mitigation from a tin DPP EUV source
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Paper Abstract

An extreme ultraviolet light (EUV) source is investigated at the University of Illinois at Urbana-Champaign (UIUC) to characterize debris ejecta. The source is a z-pinch plasma that can be used with either Sn or Xe fuels to create EUV light. As the plasma compresses, high energy photons in the extreme ultraviolet range are released and available for EUV lithography. The light emission is followed by ejection of electrons and then multiply charged ions which can significantly damage nearby mirror surfaces through erosion and deposition mechanisms. Characterization of the ejecta is performed with a spherical sector electrostatic energy analyzer (ESA) that identifies ion species by energy-to-charge ratio using ion time of flight (ITOF) analysis. The ESA is used to characterize both the energy and angular distributions of the debris fields. This instrument is capable of monitoring up to 15keV ions emitted from the source. Experiments are also performed in which data from the ESA is used to calculate total scattering cross-sections of Xe+ and other observed ions through manipulation of chamber partial gas pressures. Comparisons are made between the observed ion spectra of the EUV light source when Xe or Sn fuels are used.

Paper Details

Date Published: 18 January 2007
PDF: 10 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61513P (18 January 2007); doi: 10.1117/12.656608
Show Author Affiliations
Keith C. Thompson, Univ. of Illinois at Urbana-Champaign (United States)
Shailendra N. Srivastava, Univ. of Illinois at Urbana-Champaign (United States)
Erik L. Antonsen, Univ. of Illinois at Urbana-Champaign (United States)
David N. Ruzic, Univ. of Illinois at Urbana-Champaign (United States)
Robert L. Bristol, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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