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Proceedings Paper

Electron beam based modification of lithographic materials and the impact on critical dimensional metrology
Author(s): H. Marchman; G. F. Lorusso; D. Soltz; L. Grella; Z. Luo; J. D. Byers; J. Varner; S. Vedula; R. Kuppa; A. R. Azordegan; G. Storms; L. H. Leunissen
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Paper Abstract

CD-SEM is currently poised as the primary method of choice for CD metrology because of its nanometer scale spatial resolution, superior precision, and relatively high throughput. However, issues still continue to emerge that can threaten the measurement performance for the various sample types encountered. The impact of issues arising from electron beam induced modification of the sample materials on critical dimensional metrology and lithographic process control will be assessed and approaches to mitigate these effects will be proposed. The two primary issues of interest related to scanned electron beam based measurements of patterned lithographic materials in this article are shrinkage of the ArF 193nm resist and undesired deposition of contaminants occurring during CDSEM measurements.

Paper Details

Date Published: 24 March 2006
PDF: 11 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615227 (24 March 2006); doi: 10.1117/12.656599
Show Author Affiliations
H. Marchman, KLA-Tencor (United States)
G. F. Lorusso, IMEC (Belgium)
D. Soltz, KLA-Tencor (United States)
L. Grella, KLA-Tencor (United States)
Z. Luo, KLA-Tencor (United States)
J. D. Byers, IMEC (Belgium)
J. Varner, KLA-Tencor (United States)
S. Vedula, KLA-Tencor (United States)
R. Kuppa, KLA-Tencor (United States)
A. R. Azordegan, KLA-Tencor (United States)
G. Storms, IMEC (Belgium)
L. H. Leunissen, IMEC (Belgium)

Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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