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Proceedings Paper

Chemically amplified thick film i-line positive resist for electroplating and redistribution applications
Author(s): Medhat Toukhy; Salem Mullen; Margareta Paunescu; Chunwei Chen; Stephen Meyer; Georg Pawlowski; Yoshio Murakami; Clifford Hamel
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Paper Abstract

Adapting chemically amplified (CA) resist technology to thick film applications is demonstrated in this paper over a wide range of thicknesses and types of substrates. Substantial performance differences were observed over copper (Cu) substrates compared to silicon (Si). These differences are attributed to different photo acid generator (PAG) distribution in the resist depth influenced by its structure and the nature of the substrate. Optimized resist formulations were developed to provide acceptable performance on Cu wafers. A family of new chemically amplified thick film resist products is being introduced to the market. This technology offers significant advantages in throughput and performance over conventional novolak / diazonaphthoquinone (DNQ) products at a competitive cost.

Paper Details

Date Published: 29 March 2006
PDF: 8 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61534H (29 March 2006); doi: 10.1117/12.656595
Show Author Affiliations
Medhat Toukhy, AZ Electronic Materials USA Corp. (United States)
Salem Mullen, AZ Electronic Materials USA Corp. (United States)
Margareta Paunescu, AZ Electronic Materials USA Corp. (United States)
Chunwei Chen, AZ Electronic Materials USA Corp. (United States)
Stephen Meyer, AZ Electronic Materials USA Corp. (United States)
Georg Pawlowski, AZ Electronic Materials USA Corp. (United States)
Yoshio Murakami, AZ Electronic Materials Japan (Japan)
Clifford Hamel, Suss MicroTec (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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