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Proceedings Paper

Dissolution fundamentals of 193-nm methacrylate-based photoresists
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Paper Abstract

The dissolution of partially deprotected chemically amplified photoresists is the final step in printing lithographic features. Since this process step can be tuned independently from the design of the photoresist chemistry, measurements of the dissolution behavior may provide needed insights towards improving line-edge roughness. We have studied the dissolution behavior of a model 193-nm photoresist, poly (methyladamantyl methacrylate), as a function of deprotection extent and developer strength. The kinetics of the dissolution process is followed using the quartz crystal microbalance technique. These photoresist films exhibit strong swelling without dissolution over a significant range of deprotection levels. At larger extents of deprotection, we observe a combination of swelling with dissolution. Additionally, we find that the degree of film swelling decreases with tetramethylammonium hydroxide developer concentration. These studies provide the insight needed to better understand the fundamentals of the dissolution of the photoresist - a key step in lithographic process.

Paper Details

Date Published: 29 March 2006
PDF: 7 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615310 (29 March 2006); doi: 10.1117/12.656540
Show Author Affiliations
Ashwin Rao, National Institute of Standards and Technology (United States)
Shuhui Kang, National Institute of Standards and Technology (United States)
Bryan D. Vogt, National Institute of Standards and Technology (United States)
Vivek M. Prabhu, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-Li Wu, National Institute of Standards and Technology (United States)
Karen Turnquest, SEMATECH, Inc. (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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