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Proceedings Paper

Vinyl ether resist system for UV-cured nanoimprint lithography
Author(s): Hiroshi Ito; Frances A. Houle; Mark W. Hart; Rick A. DiPietro
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Paper Abstract

Cationic curing of vinyl ethers for step-and-flash nanoimprint lithography is described. Photochemical acid generators for use in the vinyl ether formulation were carefully selected on the basis of their solubility in neat lipophilic vinyl ether. Our favorite acid generators include diphenyltolylsulfonium triflate, CGI261, CGI1905, CGI1906, and CGI1907. The CGI1900 series is sensitive to i-line irradiation while the former two can be sensitized to 365 nm radiation by adding 9-anthracenemethanol. Phenothiazine is also an effective i-line sensitizer of the sulfonium salt. A major problem associated with the vinyl ether curing material is poor storage stability and the formulation rapidly solidifies at room temperature. However, it has been found that anthracenemethanol can stabilize the sulfonium salt and CGI formulations against the aging. Phenothiazine extends the shelf life of the sulfonium salt system but violently reacts with the CGI PAGs. Volatility of the vinyl ethers was measured by thermogravimetric analysis at room temperature. Photochemical curing of the formulations was investigated by FT-IR and also by differential scanning calorimetry (DSC) equipped with a UV lamp. The photo-DSC analysis was particularly useful in ascertaining the cure kinetics and the efficacy of the sensitization. Preliminary imprint experiments successfully printed 50 nm dense features.

Paper Details

Date Published: 29 March 2006
PDF: 11 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61531A (29 March 2006); doi: 10.1117/12.656518
Show Author Affiliations
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Frances A. Houle, IBM Almaden Research Ctr. (United States)
Mark W. Hart, IBM Almaden Research Ctr. (United States)
Rick A. DiPietro, IBM Almaden Research Ctr. (United States)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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