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Proceedings Paper

All-organic non-PFOS nonionic photoacid generating compounds with functionalized fluoroorganic sulfonate motif for chemically amplified resists
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Paper Abstract

Nonionic photoacid generators (PAGs) based on photosensitive fluoroorganic sulfonate esters of imide and nitrobenzyl have been prepared and characterized. These new compounds produce fluoroorganic sulfonic acids that contain very few fluorine atoms (non-PFOS), which make them attractive PAGs for all advanced and emerging lithography. The structural influence of these new PAGs on sensitivity, resolution and line edge roughness (LER) was investigated by using DUV (254 nm) and e-beam lithography with ESCAP and ACRYLIC type positive tone resists. E-beam lithography evaluation indicates that these new fluroorganic sulfonic acids are sensitive and capable of providing image profiles down to 80 nm. The variation observed in sensitivity and LER at e-beam lithography was analyzed in terms of the structures of the photogenerated acids, chromophores and resists.

Paper Details

Date Published: 29 March 2006
PDF: 7 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530J (29 March 2006); doi: 10.1117/12.656500
Show Author Affiliations
Ramakrishnan Ayothi, Cornell Univ. (United States)
Yi Yi, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)
Steve Putna, Intel Corp. (United States)
Wang Yueh, Intel Corp. (United States)
Heidi Cao, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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