Share Email Print
cover

Proceedings Paper

Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition
Author(s): N. Nuntawong; J. Tatebayashi; P. S. Wong; Y. C. Xin; C. P. Hains; S. Huang; L. F. Lester; D. L. Huffaker
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, we describe the results of using strain-compensation (SC) for closely-stacked InAs/GaAs quantum dot (QD) structures. The effects of the (In)GaP SC layers has been investigated using several methods. High-resolution x-ray diffractometry (XRD) quantifies the values of experimental strain reduction compared to calculations. Atomic force microscopy (AFM) indicates that the SC layer improves both QD uniformity and reduces defect density. Furthermore, increase in photoluminescence (PL) intensity has been observed from compensated structure. The use of Indium-flushing to dissolve large defect islands prevent further defect propagation in stacked QD active region. Room-temperature ground-state lasing at emission wavelengths of 1227-1249 nm have been realized with threshold current densities of 208-550 A/cm2 for 15-20 nm spacing structures.

Paper Details

Date Published: 7 February 2006
PDF: 8 pages
Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 61290E (7 February 2006); doi: 10.1117/12.656492
Show Author Affiliations
N. Nuntawong, Univ. of New Mexico (United States)
J. Tatebayashi, Univ. of New Mexico (United States)
P. S. Wong, Univ. of New Mexico (United States)
Y. C. Xin, Univ. of New Mexico (United States)
C. P. Hains, Univ. of New Mexico (United States)
S. Huang, Univ. of New Mexico (United States)
L. F. Lester, Univ. of New Mexico (United States)
D. L. Huffaker, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6129:
Quantum Dots, Particles, and Nanoclusters III
Kurt G. Eyink; Diana L. Huffaker, Editor(s)

© SPIE. Terms of Use
Back to Top