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Proceedings Paper

Minimizing wafer defectivity during high-temperature baking of organic films in 193nm lithography
Author(s): Mai Randall; Christopher Longstaff; Kenichi Ueda; Jim Nicholson; Thomas Winter
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Paper Abstract

Demands for continued defect reduction in 300mm IC manufacturing is driving process engineers to examine all aspects of the apply process for improvement. Process engineers, and their respective tool sets, are required to process films at temperatures above the boiling point of the casting solvents. This can potentially lead to the sublimation of the film chemical components. The current methods used to minimize wafer defectivity due to bake residues include frequent cleaning of bake plate modules and surrounding equipment, process optimization, and hardware improvements until more robust chemistries are available. IBM has evaluated the Tokyo Electron CLEAN TRACKTM ACTTM 12 high exhaust high temperature hotplate (HHP) lid to minimize wafer level contamination due to the outgasing of a bottom anti-reflective coating (BARC) films during the high temperature bake process. Goal was to minimize airborne contamination (particles in free space), reduce hotplate contamination build up, and ultimately reduce defects on the wafer. This evaluation was performed on a 193nm BARC material. Evaluation data included visual hardware inspections, airborne particle counting, relative thickness build up measurements on hotplate lids, wafer level defect measurements, and electrical open fail rate. Film coat thickness mean and uniformity were also checked to compare the high exhaust HHP with the standard HHP lid. Chemical analysis of the HHP module residue was performed to identify the source material. The work will quantify potential cost savings achieved by reducing added wafer defects during processing and extending PM frequency for equipment cleaning.

Paper Details

Date Published: 29 March 2006
PDF: 9 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530V (29 March 2006); doi: 10.1117/12.656443
Show Author Affiliations
Mai Randall, IBM Corp. (United States)
Christopher Longstaff, Tokyo Electron America, Inc. (United States)
Kenichi Ueda, Tokyo Electron America, Inc. (United States)
Jim Nicholson, Tokyo Electron America, Inc. (United States)
Thomas Winter, Tokyo Electron America, Inc. (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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