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Proceedings Paper

Synthesis of nanoporous GaN crystalline particles by chemical vapor deposition
Author(s): Joan J. Carvajal; Nadia Gomez; Jie Bai; Michael Dudley; J. Carlos Rojo
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Paper Abstract

Nanoporous, micron-size GaN particles with pores between 40 and 100 nm in diameter have been synthesized on boron nitride (BN) substrates using chemical vapor deposition (CVD) techniques. The synthesis process is based on the direct reaction of gallium atoms and ammonia molecules without the presence of intentional metal catalysts. Scanning electron micrographs reveal the formation of GaN nanoporous morphologies ranging from micron-size particles with hexagonal pyramidal prismatic shape to hexagonal platelets. The nanopores are only observed on the (0001) basal plane and aligned orderly along the [0001] crystallographic direction. High-Resolution Transmission Electron Microscopy (HRTEM) confirms that the nanoporous particles are, where analyzed, wurtzite GaN single crystal.

Paper Details

Date Published: 3 March 2006
PDF: 8 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210E (3 March 2006); doi: 10.1117/12.656389
Show Author Affiliations
Joan J. Carvajal, Stony Brook Univ. (United States)
Nadia Gomez, Stony Brook Univ. (United States)
Jie Bai, Stony Brook Univ. (United States)
Michael Dudley, Stony Brook Univ. (United States)
J. Carlos Rojo, Stony Brook Univ. (United States)

Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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