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Proceedings Paper

Progress of topcoat and resist development for 193nm immersion lithography
Author(s): Katsumi Ohmori; Tomoyuki Ando; Toshikazu Takayama; Keita Ishizuka; Masaki Yoshida; Yoshiyuki Utsumi; Kotaro Endo; Takeshi Iwai
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Paper Abstract

193nm immersion lithography is the most promising lithography candidate for 45nm node technology and beyond. However, immersion specific issue, such as the immersion specific defect and the leaching of resists compound into immersion fluid, still exists without any effective countermeasure. To realize a productive 193nm immersion lithography process, we have to develop a cost effective material that might be immersion dedicated resist. In this paper, we investigated the leaching with different polymer protective agents and hydrophobicity. It was found that the leaching amount was strongly related to the activation energy of the protective agent and hydrophobicity of the polymer. Higher activation energy of protective agents and higher hydrophobicity of polymer showed less amount of leaching. In this paper, newly developed developable type topcoat TILCTM-031 demonstrated the excellent ability of immersion defect prevention.

Paper Details

Date Published: 11 April 2006
PDF: 8 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61531X (11 April 2006); doi: 10.1117/12.656360
Show Author Affiliations
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Tomoyuki Ando, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Toshikazu Takayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Keita Ishizuka, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Masaki Yoshida, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Yoshiyuki Utsumi, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Kotaro Endo, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takeshi Iwai, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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