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Proceedings Paper

Mass production level ArF immersion exposure tool
Author(s): Masahiko Okumura; Jun Ishikawa; Masato Hamatani; Masahiro Nei
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Paper Abstract

VLSI chips are becoming denser and the industry is now moving to the development of devices at the 65nm node. While Nikon is working toward the development of next-generation lithography tools, we are also making efforts to extend the life of DUV excimer steppers by continuing reductions in feature size without any major changes to the conventional process. Nikon's new model, the ArF Immersion Scanner NSR-S609B, utilizes immersion lithography in which the space between the projection lens and the wafer is filled with ultra pure water with a refractive index of 1.44. This immersion technology enables the NSR-S609B to break through the N.A. 1.0 barrier to achieve the world's highest N.A. of 1.07, an impossible feat by a conventional lithography or dry exposure. This system will contribute to the production of advanced 55nm and smaller devices. Latest evaluation results of the immersion imaging system and the new stage system are presented.

Paper Details

Date Published: 21 March 2006
PDF: 8 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61541U (21 March 2006); doi: 10.1117/12.656349
Show Author Affiliations
Masahiko Okumura, Nikon Corp. (Japan)
Jun Ishikawa, Nikon Corp. (Japan)
Masato Hamatani, Nikon Corp. (Japan)
Masahiro Nei, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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