Share Email Print
cover

Proceedings Paper

In-line CD metrology with combined use of scatterometry and CD-SEM
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Measurement characteristics in scatterometry and CD-SEM for lot acceptance sampling of inline critical dimension (CD) metrology were investigated by using a statistical approach with Monte Carlo simulation. By operation characteristics curve analysis, producer's risk and consumer's risk arising from sampling were clarified. Single use of scatterometry involves a higher risk, such risk being particularly acute in the case of large intra-chip CD variation because it is unable to sufficiently monitor intra-chip CD variation including local CD error. Substituting scatterometry for conventional SEM metrology is accompanied with risks, resulting in the increase of unnecessary cost. The combined use of scatterometry and SEM metrology in which the sampling plan for SEM is controlled by scatterometry is a promising metrology from the viewpoint of the suppression of risks and cost. This is due to the effect that CD errors existing in the distribution tails are efficiently caught.

Paper Details

Date Published: 24 March 2006
PDF: 9 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521V (24 March 2006); doi: 10.1117/12.656326
Show Author Affiliations
Masafumi Asano, Toshiba Corp. (Japan)
Takahiro Ikeda, Toshiba Corp. (Japan)
Toru Koike, Toshiba Corp. (Japan)
Hideaki Abe, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

© SPIE. Terms of Use
Back to Top