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Proceedings Paper

Physical vapor transport crystal growth of ZnO
Author(s): J. Carlos Rojo; Shanshan Liang; Hui Chen; Michael Dudley
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Paper Abstract

Physical vapor transport (PVT) growth of mm-size, polycrystalline ZnO has been demonstrated at temperatures exceeding 1600°C under air at atmospheric pressure. Scanning electron microscopy (SEM) analysis revealed the growth of grains and microcrystals with strong faceted morphologies suggesting near-equilibrium growth conditions. In addition, a temperature-dependent formula for the O2 sticking coefficient has been developed to predict the maximum growth rate of PVT ZnO. Combining this formula with an existing one-dimensional analytical model for PVT growth of bulk AlN, the value of the growth rate of PVT ZnO as a function of temperature and oxygen vapor partial pressure has been studied. This analysis predicts that growth rates in the order of 1mm/h could be theoretically achieved using the PVT method under non-stoichiometric oxygen-rich vapor pressures and temperatures exceeding 1600°C.

Paper Details

Date Published: 2 March 2006
PDF: 8 pages
Proc. SPIE 6122, Zinc Oxide Materials and Devices, 61220Q (2 March 2006); doi: 10.1117/12.656322
Show Author Affiliations
J. Carlos Rojo, SUNY/Stony Brook (United States)
Shanshan Liang, SUNY/Stony Brook (United States)
Hui Chen, SUNY/Stony Brook (United States)
Michael Dudley, SUNY/Stony Brook (United States)


Published in SPIE Proceedings Vol. 6122:
Zinc Oxide Materials and Devices
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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