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Proceedings Paper

The reaction mechanism of poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene]
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Kazumasa Okamoto; Seiichi Tagawa; Tomoyuki Ando; Mitsuru Sato; Hiroji Komano
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Paper Abstract

It is a well-known strategy for the improvement of resist performance to halogenate resist materials especially in electron beam and X-ray resists. However, the halogenation of polymers requires special caution for chemically amplified resists, because it may interfere with acid generation. In this work, the acid generation in poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] films was investigated. Acid yields decrease as the ratio of hexafluoroalcohol units increases. This study showed that the reactivity of the polymers with low energy electrons (~0eV) correlates to the decrease of acid yields.

Paper Details

Date Published: 29 March 2006
PDF: 9 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533O (29 March 2006); doi: 10.1117/12.656262
Show Author Affiliations
Hiroki Yamamoto, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Kazumasa Okamoto, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Tomoyuki Ando, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Mitsuru Sato, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hiroji Komano, Tokyo Ohka Kogyo Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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