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Proceedings Paper

Effect of residual gas atmosphere on lifetime of Ru-capped EUVL projection optics mirror
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Paper Abstract

Reflectance changes during the EUV irradiation were in-situ measured using two different experimental systems. One system consisted of slight high hydrocarbon (HC) content chamber and the other consisted of low HC content chamber. Distribution maps of the reflectance changes were quite different from each other. Especially, the reflectance change at the center of the EUV irradiation area was suppressed when the high HC content system was used. The surface analysis using XPS was performed. According to the analysis, it was found that two reflectance changes were arising from different reasons. It would seem that the origin of the different reasons were difference of the residual gas atmosphere.

Paper Details

Date Published: 23 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510H (23 March 2006); doi: 10.1117/12.656240
Show Author Affiliations
Yukinobu Kakutani, Univ. of Hyogo (Japan)
Masahito Niibe, Univ. of Hyogo (Japan)
Yoshio Gomei, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiromitsu Takase, Extreme Ultraviolet Lithography System Development Association (Japan)
Shigeru Terashima, Extreme Ultraviolet Lithography System Development Association (Japan)
Shuichi Matsunari, Extreme Ultraviolet Lithography System Development Association (Japan)
Takashi Aoki, Extreme Ultraviolet Lithography System Development Association (Japan)
Katsuhiko Murakami, Extreme Ultraviolet Lithography System Development Association (Japan)
Yasuaki Fukuda, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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