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Proceedings Paper

KrF laser driven xenon plasma light source of a small-field exposure tool
Author(s): Tamotsu Abe; Masato Moriya; Hiroshi Someya; Georg Soumagne; Takashi Suganuma; Takayuki Watanabe; Akira Sumitani; Hakaru Mizoguchi
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Paper Abstract

A small field exposure tool (SFET) is currently being built in Japan by the Extreme Ultraviolet Lithography System Development Association (EUVA) and Canon Inc. The laser plasma light source of SFET has been developed at the EUVA Hiratsuka R&D center. The drive laser of the xenon plasma source is a short-pulse, high-power KrF laser, that has been developed in cooperation with Gigaphoton Inc. and Komatsu Ltd. The laser has a maximum output power of 580W at 4kHz repetition rate. The xenon target is a 50 micrometer diameter liquid jet with a speed of about 30 m/s. The source has been designed to generate 0.5W in-band power at the intermediate focus at a collecting solid angle of pi sr. The set-up of the source at the Hiratsuka R&D center has been completed and the source is now being evaluated.

Paper Details

Date Published: 24 March 2006
PDF: 5 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61513T (24 March 2006); doi: 10.1117/12.656228
Show Author Affiliations
Tamotsu Abe, Extreme Ultraviolet Lithography System Development Association (Japan)
Masato Moriya, Komatsu Ltd. (Japan)
Hiroshi Someya, Extreme Ultraviolet Lithography System Development Association (Japan)
Georg Soumagne, Extreme Ultraviolet Lithography System Development Association (Japan)
Takashi Suganuma, Extreme Ultraviolet Lithography System Development Association (Japan)
Takayuki Watanabe, Komatsu Ltd. (Japan)
Akira Sumitani, Komatsu Ltd. (Japan)
Hakaru Mizoguchi, Gigaphoton Inc. (Japan)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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