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Proceedings Paper

Leakage monitoring and control with an advanced e-beam inspection system
Author(s): Hermes Liu; J. H. Yeh; Chan Lon Yang; S. C. Lei; J. Y. Kao; Y. D. Yang; Mingsheng Tsai; S. F. Tzou; Wei-Yih Wu; Hong-Chi Wu; Hong Xiao; Jack Jau
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Paper Abstract

Junction leakage control is studied with electron beam (e-beam) defect inspection after tungsten chemical mechanical polishing (WCMP). Leakage-induced bright voltage contrast (BVC) defects are detected. For both wafer to wafer (WtW) and within wafer (WiW), e-beam inspection results strongly correlate with leakage results of wafer acceptance test (WAT). Failure analysis results showed that the junction leakage was caused by lateral diffusion of nickel silicide (NiSi) underneath the spacer. The extrusion length correlates with gray levels of the tungsten plug very well. In this study we found the optimized condition to suppress junction leakage and also confirmed that post WCMP e-beam inspection can be used to monitor and control junction leakage.

Paper Details

Date Published: 24 March 2006
PDF: 9 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615249 (24 March 2006); doi: 10.1117/12.656207
Show Author Affiliations
Hermes Liu, United Microelectronics Corp. (Taiwan)
J. H. Yeh, United Microelectronics Corp. (Taiwan)
Chan Lon Yang, United Microelectronics Corp. (Taiwan)
S. C. Lei, United Microelectronics Corp. (Taiwan)
J. Y. Kao, United Microelectronics Corp. (Taiwan)
Y. D. Yang, United Microelectronics Corp. (Taiwan)
Mingsheng Tsai, United Microelectronics Corp. (Taiwan)
S. F. Tzou, United Microelectronics Corp. (Taiwan)
Wei-Yih Wu, Hermes Systems (Taiwan)
Hong-Chi Wu, Hermes Systems (Taiwan)
Hong Xiao, Hermes Microvision, Inc. USA (United States)
Jack Jau, Hermes Microvision, Inc. USA (United States)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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