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Proceedings Paper

Correlation of scatterometry sensitivities to variation in device parameters
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Paper Abstract

Scatterometry has been demonstrated to be a useful measurement technique, which allows to examine a full reconstruction of the measured structure in the semiconductor process, e.g. CD, thickness, and overlay. Even though the potential of such technique has been known for many years, the challenge for extracting quickly and accurately the relevant constitutive parameters from a diffractive signature remains. In general, the device parameters are determined by finding the minimum RMSE (root mean square error) between a measured signature and theoretical signatures in the model-based library without considering the correlation among these parameters, which induces the match error problem. This study presents a novel method, applying neural network algorithm to identify the correlation between device parameters, to reduce the correlation-induced error and increase measurement precision.

Paper Details

Date Published: 24 March 2006
PDF: 9 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615220 (24 March 2006); doi: 10.1117/12.656147
Show Author Affiliations
Chun-Hung Ko, Industrial Technology Research Institute (Taiwan)
Yi-sha Ku, Industrial Technology Research Institute (Taiwan)
Nigel Smith, Accent Optical Technologies (Taiwan)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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