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Proceedings Paper

Negative-tone polyphenol resist based on chemically amplified polarity change reaction with sub-50 nm resolution capability
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Paper Abstract

We designed a novel chemically-amplified negative-tone molecular-resist compound of 3M6C-MBSA-BL, which is a γ-hydroxycarboxylated polyphenol (4,4'-methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)] methyl]phenol (3M6C-MBSA)) for EB and EUV lithographies to be used in hp 45 and beyond technology nodes. After selection of photo acid generators (PAGs) and optimization of the concentration of PAG in the resist, we could demonstrate 40-nm line and space patterns resolution by EB exposure. Also dry-etching durability and 1-month shelf life at -20oC were confirmed. Small line-edge roughness (LER) values of 4.5 nm (inspection length: L = 620 nm) and 6.2 nm (L = 1800 nm) were achieved using the 3M6C-MBSA-BL resist.

Paper Details

Date Published: 29 March 2006
PDF: 8 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530G (29 March 2006); doi: 10.1117/12.656112
Show Author Affiliations
Kyoko Kojima, Hitachi, Ltd. (Japan)
Takashi Hattori, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Taku Hirayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Daiju Shiono, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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