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Proceedings Paper

Model-based lithography verification system for multilayer structure in electron-beam direct writing
Author(s): Kozo Ogino; Hiromi Hoshino; Yasuhide Machida
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Paper Abstract

In the high-energy electron-beam lithography, proximity effects caused by the multilayer structure including heavy-metal materials are crucial for the resist patterning. The proximity effect depends not only on the pattern arrangement in the underlying layers but also on the critical dimension (CD) variation of patterned metal in the underlying layers and the chemical-mechanical polishing (CMP) non-uniformity among chips on a wafer. This paper proposes a novel lithography verification method based on the SEEF model, where the backscattering deposited energy intensity distribution to the resist is calculated by the mapping of transmitted electron energy flux and reflected electron energy flux in the multilayer structure. The verification method provides the capability of CD error prediction considered the proximity effect caused by the multilayer structure.

Paper Details

Date Published: 24 March 2006
PDF: 10 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 615129 (24 March 2006); doi: 10.1117/12.656105
Show Author Affiliations
Kozo Ogino, Fujitsu Ltd. (Japan)
Hiromi Hoshino, Fujitsu Ltd. (Japan)
Yasuhide Machida, Fujitsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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