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Proceedings Paper

Performance comparison of chemically amplified resists under EUV, EB, and KrF exposure
Author(s): Daisuke Shimizu; Nobuji Matsumura; Toshiyuki Kai; Yoshikazu Yamaguchi; Tsutomu Shimokawa; Koichi Fujiwara
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Paper Abstract

EUV exposure is crucial to evaluate EUV resists but there are currently a limited number of EUV exposure tools available worldwide. Therefore, an alternative exposure method should be considered to accelerate EUV resist development. To design materials for EUV resist, it is useful to identify and characterize acid generation mechanisms under EUV exposure. To do this, a performance comparison under EUV, EB and KrF exposure was performed to gather information about the acid generation mechanism during EUV exposure. In this paper, the performance of chemically amplified resists under EUV, EB and KrF was compared regarding sensitivity, LWR and pattern-profile not only to consider alternative exposure methods but also to elucidate the acid generation mechanism under EUV exposure. Regarding sensitivity, good correlation was observed between EUV and EB exposure, however, in regard to LWR and resist pattern profile, poor correlation was observed between EUV and EB exposure, and between EUV and KrF exposure. As a result, alternative exposure methods could be used only for basic evaluation and it was determined that EUV exposure was necessary for EUV resist development using chemically amplified resist. From the correlation of sensitivity between EUV and EB exposure, it is suggested that the main acid generation mechanism under EUV exposure was ionization.

Paper Details

Date Published: 29 March 2006
PDF: 10 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615344 (29 March 2006); doi: 10.1117/12.656097
Show Author Affiliations
Daisuke Shimizu, JSR Corp. (Japan)
Nobuji Matsumura, JSR Corp. (Japan)
Toshiyuki Kai, JSR Corp. (Japan)
Yoshikazu Yamaguchi, JSR Corp. (Japan)
Tsutomu Shimokawa, JSR Corp. (Japan)
Koichi Fujiwara, JSR Micro, Inc. (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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