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Proceedings Paper

Study of ADI (after develop inspection) using electron beam
Author(s): Misako Saito; Teruyuki Hayashi; Kaoru Fujihara; Kazuha Saito; Joseph Lin; Ryotaro Midorikawa
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Paper Abstract

In this paper, we established a method to detect defects with a size of 40nm, which is required in the machine to inspect defects on the photo resist of hp65nm generation. First of all, we clarified the mechanism of nuisance generation by electron beam and established a method to control nuisances. Next, we examined the inspection conditions required for detection of minute defects. As a result, the relation between the landing energy, brightness, or contrast and the defect detection ratio were clarified. We successfully detected minute defects of 40nm in the inspection based on a strategies obtained from these examination results to confirm that we established a method to detect minute defects. In addition, we compared defects on photo resist in electron beam inspection and electric defects in the wiring resistance measurement. As a result, the defect distribution on photo resist was found identical to the electric defect distribution. Thus, we proved that the defect inspection on photo resist using electron beam was detecting the killer defects. Therefore, we showed that the resist defect inspection using electron beam is effective for the 65nm generation.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615248 (24 March 2006); doi: 10.1117/12.656090
Show Author Affiliations
Misako Saito, Tokyo Electron Ltd. (Japan)
Teruyuki Hayashi, Tokyo Electron Ltd. (Japan)
Kaoru Fujihara, Tokyo Electron Ltd. (Japan)
Kazuha Saito, Tokyo Electron Ltd. (Japan)
Joseph Lin, Hermes Microvision, Inc. (Taiwan)
Ryotaro Midorikawa, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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