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Proceedings Paper

New proximity effect correction for under 100nm patterns
Author(s): Masahiro Shoji; Nobuyasu Horiuchi; Tomoyuki Chikanaga; Takashi Niinuma; Dai Tsunoda
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Paper Abstract

As pattern size becomes very small, it has been getting difficult to correct an EB proximity effect accurately. We have developed a new proximity effect correction which corrects dose by simulating the pattern width. It can correct accurately a pattern of 100nm and below.

Paper Details

Date Published: 24 March 2006
PDF: 10 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 615128 (24 March 2006); doi: 10.1117/12.656079
Show Author Affiliations
Masahiro Shoji, Nippon Control System Corp. (Japan)
Nobuyasu Horiuchi, Nippon Control System Corp. (Japan)
Tomoyuki Chikanaga, Nippon Control System Corp. (Japan)
Takashi Niinuma, Nippon Control System Corp. (Japan)
Dai Tsunoda, Nippon Control System Corp. (Japan)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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