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Proceedings Paper

Statistical analysis of CD-SEM measurement and process control in the indistinguishable multiprocess patterns
Author(s): Duck-Sun Yang; Myung-Ho Jung; Young-Mi Lee; Cha-Won Koh; Gi-Sung Yeo; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
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Paper Abstract

As device size is going under the sub-60 nanometer scale, lithography is facing its resolution limit. To solve this resolution limit it has been suggested that one critical device layer could be made from multi photo/etch process, which needs tighter overlay and critical dimension (CD) controls than normal single exposure process. For CD control in this multi photo/etch process, the problem is that we do not know which pattern is made from which photo/etch process after final process. This makes it impossible to measure the specific process pattern's CD independently. In this case the conventional CD measuring method, which measures multi CDs in FOV(Field Of View) of SEM(Scanning Electronic Microscope) and control their average and distribution, couldn't know the average difference between both patterns because the variance from simply measured multi CD is just sum of each variance and their cross terms not including the average difference. In this paper it is pointed out the statistical problem of classical multi CD measurement in the indistinguishable multi-process pattern and a compensative method is suggested with a new statistical formula.

Paper Details

Date Published: 24 March 2006
PDF: 7 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522K (24 March 2006); doi: 10.1117/12.656058
Show Author Affiliations
Duck-Sun Yang, Samsung Electronics (South Korea)
Myung-Ho Jung, Samsung Electronics (South Korea)
Young-Mi Lee, Samsung Electronics (South Korea)
Cha-Won Koh, Samsung Electronics (South Korea)
Gi-Sung Yeo, Samsung Electronics (South Korea)
Sang-Gyun Woo, Samsung Electronics (South Korea)
Han-Ku Cho, Samsung Electronics (South Korea)
Joo-Tae Moon, Samsung Electronics (South Korea)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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