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Proceedings Paper

Ultimate fine-pitch resist patterning using the ASET-HINA
Author(s): H. Oizumi; Y. Tanaka; F. Kumasaka; I. Nishiyama
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Paper Abstract

This study had two goals. One was the evaluation of the ultimate fine-pitch patterning performance of the high-numerical-aperture (NA = 0.3) small-field EUV exposure tool (HINA). The other was the evaluation of the lithographic performance of conventional chemically-amplified (CA) polymeric resists and molecular resists using the HINA. Imaging experiments were carried out using coherent illumination (σ = 0.0). An EUV mask with a 60~80-nm-thick TaGeN absorber and a 10-nm-thick Cr buffer layer was fabricated to replicate dense sub-30-nm patterns. To determine the ultimate resolution of the HINA under three-ray interference in the sagittal direction, sub-30-nm-wide lines and spaces were delineated in a non-chemically-amplified resist. The smallest patterns delineated were dense 27-nm-wide lines, and the resolution obtained was nearly equal to the resolution limit of the HINA, which is the cut-off frequency of the optics in three-ray interference. A polymeric CA resist based on acetal-protected poly(hydroxystyrene) provided the best performance. It enabled the delineation of 28-nm-wide lines and spaces in a 70-nm-thick layer of resist at an exposure dose of 10 mJ/cm2. A CA positive-tone resist based on low-molecular-weight amorphous polyphenol was also tested. It consists of a partially protected polyphenol, namely, 4,4'-methylenebis[2-[di(2,5-dimehtyl-4-hydroxyphenyl) methyl]phenol (25X-MBSA-P). It enabled the delineation of 30-nm-wide lines and spaces in a 40-nm-thick layer at an exposure dose of 10 mJ/cm2. In addition, the sub-22-nm patterning of CA resists was performed under two-ray interference in the meridional direction.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61512Q (24 March 2006); doi: 10.1117/12.656050
Show Author Affiliations
H. Oizumi, ASET (Japan)
Kyushu Institute of Technology (Japan)
Y. Tanaka, ASET (Japan)
F. Kumasaka, ASET (Japan)
I. Nishiyama, ASET (Japan)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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