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Proceedings Paper

Mask topography effect on OPC at hyper-NA lithography
Author(s): Sook Lee; In-Sung Kim; Yong-Jin Chun; Sang-Wook Kim; Suk-Joo Lee; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
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Paper Abstract

Most of simulation tools and OPC engines use Kirchhoff (thin mask) approximation for imaging calculation. Some commercial simulation tools have implemented the rigorous algorithm to solve the Maxwell's equations for the electric and magnetic fields. Currently, a rigorous algorithm is being used for the case of high topographical mask such as CPL and alternating PSM. However, the mask topographical effect of binary mask and attenuated PSM is not negligible in the case of hyper NA lithography. Implementing the rigorous algorithm on full chip OPC is impractical due to its OPC runtime limitation. Thin mask and rigorous simulation modeling are compared to check whether the current algorithms of OPC tools can sufficiently reflect the mask topography effect of hyper NA lithography and whether a combination of currently usable algorithms can cover the mask topography effect. OPC modeling is generally executed based on measured CD data. However we do not have usable hyper NA scanners, so the OPC modeling is executed based on full physical simulation data to the resist image, which we will define as a "Virtual OPC modeling".

Paper Details

Date Published: 15 March 2006
PDF: 8 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61541R (15 March 2006); doi: 10.1117/12.655998
Show Author Affiliations
Sook Lee, Samsung Electronics Co., Ltd. (South Korea)
In-Sung Kim, Samsung Electronics Co., Ltd. (South Korea)
Yong-Jin Chun, Samsung Electronics Co., Ltd. (South Korea)
Sang-Wook Kim, Samsung Electronics Co., Ltd. (South Korea)
Suk-Joo Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Han-Ku Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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