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Proceedings Paper

Estimation of pattern shape based on CD-SEM image by using MPPC method
Author(s): T. Onozuka; Y. Ojima; J. Meessen; B. Rijpers
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Paper Abstract

This study demonstrates the MPPC (Multiple Parameters Profile Characterization) measurement method utilizing ArF photo resist patterns. MPPC is a technique for estimating the three dimensional profile of patterns which are imaged and measured on the CD-SEM (critical dimension scanning electron microscope). MPPC utilizes the secondary electron signal to calculate several indices including top CD, peak CD, top rounding, bottom footing, etc. This primary focused of this study is to understand the variations in pattern profile caused by changes in exposure condition. The results demonstrate the ability to extract pattern profile shape information by MPPC measurement that could not otherwise be detected by a conventional bottom CD measurement method. Furthermore, the results were compared to cross sectional images collected by STEM (scanning transmission electron microscope) to verify the accuracy of the MPPC technique. The peak CD results accurately estimate the pattern width when the sidewall angle of the feature is nearly vertical. Additionally, line edge roughness (LER) caused by pattern profile variations was evaluated utilizing MPPC. The results suggest that MPPC may be utilized to evaluate the roughness over the entire profile.

Paper Details

Date Published: 24 March 2006
PDF: 9 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521D (24 March 2006); doi: 10.1117/12.655987
Show Author Affiliations
T. Onozuka, Hitachi High-Technologies Corp. (Japan)
Y. Ojima, Hitachi High-Technologies Corp. (Japan)
J. Meessen, ASML (Netherlands)
B. Rijpers, ASML (Netherlands)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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