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Proceedings Paper

Analysis of the emission spectrum of Xe and Sn
Author(s): A. Sasaki; K. Nishihara; A. Sunahara; T. Nishikawa; F. Koike; K. Kagawa; H. Tanuma
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Paper Abstract

The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61513W (24 March 2006); doi: 10.1117/12.655938
Show Author Affiliations
A. Sasaki, Japan Atomic Energy Research Agency (Japan)
K. Nishihara, Osaka Univ. (Japan)
A. Sunahara, Institute for Laser Technology (Japan)
T. Nishikawa, Okayama Univ. (Japan)
F. Koike, Kitasato Univ. (Japan)
K. Kagawa, Nara Women's Univ. (Japan)
H. Tanuma, Tokyo Metropolitan Univ. (Japan)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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