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Proceedings Paper

Enabling DFM and APC strategies with advanced process metrics
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Paper Abstract

Most semiconductor manufacturers expect 193nm immersion lithography to remain the dominant patterning technology through the 32nm technology node. If this remains the case, the interaction of more complex designs with shrinking process windows will severely limiting parametric yield. The industry is responding with strategies based upon design for manufacturability (DFM) and multi-variate advanced process control (APC). The primary goal of DFM is to enlarge the process yield window, while the primary goal of APC is to keep the manufacturing process in that yield window. In this work, we discuss new and innovative process metrics, including simulation-based virtual metrology, that will be needed for yield at the 32nm technology node.

Paper Details

Date Published: 24 March 2006
PDF: 14 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521E (24 March 2006); doi: 10.1117/12.655894
Show Author Affiliations
Kevin Monahan, KLA-Tencor Corp. (United States)
Umar Whitney, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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