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Proceedings Paper

Numerical modeling of absorber characteristics for EUVL
Author(s): In-Yong Kang; Jinho Ahn; Hye-Keun Oh; Yong-Chae Chung
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Paper Abstract

The characteristics of various potential absorbers, such as Cr, Ta, and TaN materials were quantitatively investigated by calculating the optical contrast and geometrical width variation of pattern image of 25-nm-width transferred through the exposure system. The intrinsic absorber performance was evaluated by the numerical modeling of the reflectivity on the mask and the aerial image intensity on the wafer. The reflectivity on the mask was calculated for various absorber thicknesses (40-70 nm) using Fresnel equation. For the calculation of the aerial image intensity of pattern features with various absorbers, SOLID-EUV, which is capable of rigorous electromagnetic field computation, was employed. It could be reasonably concluded that the TaN absorber model showed superior optical characteristics compared to other absorber systems, whereas the best performance on the geometrical characteristics was found in the Ta absorber system.

Paper Details

Date Published: 23 March 2006
PDF: 7 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 615121 (23 March 2006); doi: 10.1117/12.655852
Show Author Affiliations
In-Yong Kang, Hanyang Univ. (South Korea)
Jinho Ahn, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)
Yong-Chae Chung, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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