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Proceedings Paper

Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation
Author(s): Chi-Yuan Hung; Bin Zhang; Eric Guo; Linyong Pang; Yong Liu; Kechang Wang; Grace Dai
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Paper Abstract

This paper presents the results of applying ILT to SMIC's first 65nm tape out. ILT mathematically determines the mask features that produce the desired on-wafer results for best pattern fidelity, largest process window or an desired combination of both. SMIC applied this technology to its first 65nm tape-out to study its performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first set of test cases, because SRAM bit-cells contain features which are lithographically challenging. Firstly, three experiments were performed to optimize the illumination and mask design of a pair of layers by optimizing exposure energy, enabling SRAF, and enforcing mask constraints. Secondly, mask manufacturability (including fracturing and writing time) and wafer print performance of ILT was studied. Thirdly, mask patterns generated by both conventional Optical Proximity Correction (OPC) and ILT, both using only their optical models, were placed on the mask side-by-side. The results demonstrated that ILT achieved better CD accuracy and produced significantly larger process window than conventional OPC.

Paper Details

Date Published: 15 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61541M (15 March 2006); doi: 10.1117/12.655728
Show Author Affiliations
Chi-Yuan Hung, Semiconductor International Manufacturing Corp. (China)
Bin Zhang, Semiconductor International Manufacturing Corp. (China)
Eric Guo, Semiconductor International Manufacturing Corp. (China)
Linyong Pang, Luminescent Technologies, Inc. (United States)
Yong Liu, Luminescent Technologies, Inc. (United States)
Kechang Wang, Luminescent Technologies, Inc. (United States)
Grace Dai, Luminescent Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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