Share Email Print
cover

Proceedings Paper

A novel photosensitive material for redistribution and stress buffer reduction on 300mm wafers
Author(s): Warren W. Flack; Ha-Ai Nguyen; Elliott Capsuto
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The widespread adoption of advanced packaging techniques is driven by electrical device performance and chip form factor considerations. Flipchip packaging is currently growing at a 25% compound annual rate and it is expected that 90% of all 65 nm logic devices will be bumped. To ensure optimal productivity and cost of ownership, it is imperative to employ lithographic materials that are optimized for these applications and that meet all device specifications. Bump processing typically has one or more levels that require a permanent layer either to relieve stress on the die (stress buffer layer) or to redistribute electrical connections (redistribution layer). Since these layers remain on the wafer, the mechanical and electrical properties of the material are as important as the lithographic properties. This study will characterize a novel negative, siloxane (Shin-Etsu SINR(R)) photoresist for the redistribution and stress buffer application on 300 mm wafers. Siloxanes are a good choice for redistribution and stress buffer layers because of their excellent physical properties, ease of processing and relatively low cure temperatures. The lithographic performance of the SINR is optimized using a broad band, low numerical aperture, 1X stepper. This study evaluates softbake, post exposure bake (PEB), develop conditions and exposure optimization. Due to decreasing feature size at the redistribution level, it is critical to demonstrate CD uniformity and resolution across the entire 300 mm wafer surface. While the CD uniformity data is collected on 300 mm wafers, all process optimization results will be applicable for all standard wafer sizes. The physical properties of the SINR material are evaluated through curing temperature studies and sputtering tests.

Paper Details

Date Published: 29 March 2006
PDF: 12 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61534K (29 March 2006); doi: 10.1117/12.655727
Show Author Affiliations
Warren W. Flack, Ultratech, Inc. (United States)
Ha-Ai Nguyen, Ultratech, Inc. (United States)
Elliott Capsuto, Shin-Etsu MicroSi, Inc. (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

© SPIE. Terms of Use
Back to Top