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Proceedings Paper

Selection and evaluation of developer-soluble topcoat for 193nm immersion lithography
Author(s): Yayi Wei; K. Petrillo; S. Brandl; F. Goodwin; P. Benson; R. Housley; U. Okoroanyanwu
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Paper Abstract

Successful developer-soluble topcoats have to fulfill numerous requirements; specifically they have to serve as a barrier layer and be compatible with the resist. Some of the requirements and compatibility issues have been understood; others are still under-investigation by the joint efforts of lithographers and resist chemists. This paper addresses these requirements from the perspective of overall lithographic performance for developer-soluble topcoats used in 193nm water immersion lithography. We demonstrate that with the optimized combination of resist and developer-soluble topcoat 90nm 1:1 dense lines can be printed using a prototype tool, ASML AT 1150i, and a binary image mask (BIM) with a maximum depth-of-focus (DOF) of ~1.2μm. An approximate 2X DOF improvement over dry lithography that was theoretically expected has been truly demonstrated. Topcoat related defectivity as well as defect reduction efforts are also discussed.

Paper Details

Date Published: 29 March 2006
PDF: 12 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615306 (29 March 2006); doi: 10.1117/12.655725
Show Author Affiliations
Yayi Wei, Infineon Technologies North America Corp. (United States)
K. Petrillo, IBM (United States)
S. Brandl, Infineon Technologies North America Corp. (United States)
F. Goodwin, Infineon Technologies North America Corp. (United States)
P. Benson, Micron Technology (United States)
R. Housley, Micron Technology (United States)
U. Okoroanyanwu, AMD (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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