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Proceedings Paper

Phase-shift mask for EUV lithography
Author(s): C. Constancias; M. Richard; D. Joyeux; J. Chiaroni; R. Blanc; J. Y. Robic; E. Quesnel; V. Muffato
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Paper Abstract

EUV lithography is expected to be inserted for the 32 nm node and extended for the 22 nm and below. Phase shift masks (PSM) are evaluated as a possible option to push the resolution limit of the Extreme Ultra violet lithography. This paper will focus on designs and measurements of PSM implemented by etching into the Mo/Si multilayer (ML). The design and the technological developments to elaborate PSM by etching is described. Phase shift Sample (PSS) have been carried out to calibrate in "true operating conditions", i.e. through the measurement of the phase shift they produce on a reflected wavefront, at the wavelength (λ=13.5nm). The method of calibration have been investigated with a Fresnel bimirror interferometer installed on the PSI Swiss Light Source Synchrotron to measure directly the value of interest, i.e the optical phase.

Paper Details

Date Published: 23 March 2006
PDF: 12 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61511W (23 March 2006); doi: 10.1117/12.655583
Show Author Affiliations
C. Constancias, CEA-LETI (France)
M. Richard, Lab. d'Electronique de Technologie de l'Information (France)
D. Joyeux, Univ. Paris-Sud II (France)
J. Chiaroni, Lab. d'Electronique de Technologie de l'Information (France)
R. Blanc, CEA-LETI (France)
J. Y. Robic, CEA-LETI (France)
E. Quesnel, CEA-LETI (France)
V. Muffato, CEA-LETI (France)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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