Share Email Print

Proceedings Paper

Studies on immersion defects using mimic immersion experiments
Author(s): Tetsuro Hanawa; Toshifumi Suganaga; Takeo Ishibashi; Shinroku Maejima; Koichiro Narimatsu; Kazuyuki Suko; Mamoru Terai; Teruhiko Kumada; Junichi Kitano
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Top coat process is required for immersion lithography in order to prevent both the chemical contamination of scanner optics with eluted chemicals from resist material and the formation of residual droplet under the immersion exposure with high scanning speed. However, defect density of ArF immersion lithography with alkaline developer soluble type top coat material is much higher than that of ArF dry lithography. Mimic immersion experiments comprised of soaking of exposed conventional dry ArF resist with purified water followed by drying step were performed in order to study the immersion specific defects. It was suggested that the origin of immersion specific defects with alkaline developer soluble type top coat was the remaining water on and in the permeable top coat layer that might interfere the desired deprotection reaction of resist during post exposure bake (PEB). Therefore, application of post exposure rinse process that can eliminate the impact of the residual micro water droplets before PEB is indispensable for defect reduction. Post exposure rinse with optimized purified water dispense sequence was noticed to be valid for defect reduction in mimic immersion lithography, probably in actual immersion lithography.

Paper Details

Date Published: 11 April 2006
PDF: 10 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61531O (11 April 2006); doi: 10.1117/12.655568
Show Author Affiliations
Tetsuro Hanawa, Renesas Technology Corp. (Japan)
Toshifumi Suganaga, Renesas Technology Corp. (Japan)
Takeo Ishibashi, Renesas Technology Corp. (Japan)
Shinroku Maejima, Renesas Technology Corp. (Japan)
Koichiro Narimatsu, Renesas Technology Corp. (Japan)
Kazuyuki Suko, Renesas Technology Corp. (Japan)
Mamoru Terai, Mitsubishi Electric (Japan)
Teruhiko Kumada, Mitsubishi Electric (Japan)
Junichi Kitano, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

© SPIE. Terms of Use
Back to Top