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Proceedings Paper

Performance and quality analysis of Mo-Si multilayers deposited by ion beam sputtering and magnetron sputtering
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Paper Abstract

Ion beam sputtering and magnetron sputtering were used to grow Mo-Si multilayer structures to investigate which is more suitable for the fabrication of mask blanks for extreme ultraviolet (EUV) lithography. For ion beam sputtering, the difference between using Ar and Xe as the sputtering gas was also examined. For ion beam sputtering, the peak EUV reflectivity of 40 Mo-Si bilayers was measured to be about 62% at wavelengths in the range of 12-15 nm; while for magnetron sputtering, the value was 65%. A transmission electron microscopy analysis of multilayers deposited by ion beam sputtering revealed an interface layer between the two materials: It had a thickness of 1.5 ± 0.2 nm when Mo was deposited on Si, and a thickness of 0.7 ± 0.2 nm when Si was deposited on Mo. These interface layers were 30-50% thicker than those formed during magnetron sputtering. The mechanism by which interface layers form is discussed based on an ion implantation model.

Paper Details

Date Published: 23 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61511V (23 March 2006); doi: 10.1117/12.655563
Show Author Affiliations
Kenji Hiruma, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Miyagaki, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Jerry Cullins, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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