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Proceedings Paper

EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers
Author(s): Holger Seitz; Markus Renno; Thomas Leutbecher; Nathalie Olschewski; Torsten Reichardt; Ronny Walter; Helmut Popp; Günter Hess; Florian Letzkus; Jörg Butschke; Mathias Irmscher
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Paper Abstract

Continuous reduction of feature size in semiconductor industry and manufacturing integrated circuits at low costs requires new and innovative technology to overcome existing limitations of optics. Tremendous progress in key areas like EUVL light source technology and manufacturing technology of EUVL masks with low defect rates have been made recently and EUVL is the leading technology capable to be extended so Moore's law, the shrinkage of IC critical features, can continue to be valid. SCHOTT Lithotec has introduced all relevant technology steps to manufacture EUV mask blanks, ranging from Low Thermal Expansion Material (LTEM) with high quality substrate polishing to low defect blank manufacturing. New polishing and cleaning technologies, improved sputter technology and updated metrology enable us to routinely produce EUVL mask blanks meeting already many of the roadmap requirements. Further R&D is ongoing to path the way to the production of EUV blanks which meet all requirements. An important focus of this paper is to present the recent results on LTEM substrates, which include defect density, roughness and flatness simultaneously, as well as EUVL multilayer properties such as defect density, optical properties like reflectivity and uniformity in the EUV range and optical resistance to cleaning steps. In addition the design of EUVL absorber material will be discussed, including optical performance at EUV wavelength and its contrast behavior. Finally, IMS Chips has developed the dry etch process of these EUV Mask Blanks by optimizing etch selectivities, profiles and etch bias. Results on CD uniformity, linearity and iso/dense bias will be presented.

Paper Details

Date Published: 22 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 615109 (22 March 2006); doi: 10.1117/12.655540
Show Author Affiliations
Holger Seitz, SCHOTT Lithotec AG (Germany)
Markus Renno, SCHOTT Lithotec AG (Germany)
Thomas Leutbecher, SCHOTT Lithotec AG (Germany)
Nathalie Olschewski, SCHOTT Lithotec AG (Germany)
Torsten Reichardt, SCHOTT Lithotec AG (Germany)
Ronny Walter, SCHOTT Lithotec AG (Germany)
Helmut Popp, SCHOTT Lithotec AG (Germany)
Günter Hess, SCHOTT Lithotec AG (Germany)
Florian Letzkus, Institut für Mikroelektronik Stuttgart (Germany)
Jörg Butschke, Institut für Mikroelektronik Stuttgart (Germany)
Mathias Irmscher, Institut für Mikroelektronik Stuttgart (Germany)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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