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Proceedings Paper

Bias-free measurement of LER/LWR with low damage by CD-SEM
Author(s): Atsuko Yamaguchi; Robert Steffen; Hiroki Kawada; Takashi Iizumi
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Paper Abstract

We propose a new method for the evaluation of line-edge or linewidth roughness (LER/LWR). Conventional, directly measured LER/LWR values always contain a random noise contribution, which is called LER/LWR bias. Our method can separate this bias artifact from the true LER/LWR by using a single image of the sample pattern. The idea is based on the dependency of a measured LER/LWR value on the image-processing parameter for noise reduction. Both, the conventional and the new bias-free LER were calculated on series of images with different frame integration numbers but a fixed field of view. In addition, the validity of this method to the gate-LWR measurement on an ArF resist line pattern was examined. The LER/LWR obtained by our method was independent of the frame number, and agreed with the conventional LER/LWR as measured on an image with a sufficiently large frame-number. That is, our method can evaluate LER/LWR without random-noise contribution, suggesting that the method can be applied to images recorded under low-sample-damage conditions (i.e., low signal-to-noise ratio). It is concluded that the proposed bias-free LER/LWR measurement method will be a powerful tool in lithography metrology especially for achieving practical and accurate LER/LWR measurement with low sample damage.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522D (24 March 2006); doi: 10.1117/12.655496
Show Author Affiliations
Atsuko Yamaguchi, Hitachi Ltd. (Japan)
Robert Steffen, Hitachi High-Technologies Corp. (Japan)
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Takashi Iizumi, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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