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Proceedings Paper

Polymer structure modifications for immersion leaching and watermark control
Author(s): Jae Woo Lee; Seung Keun Oh; Jung Woo Kim; Sang Hyang Lee; Young Ho Jeong; Sang Soo Kim; Myoung Hwan Park; Deogbae Kim; Jaehyun Kim; Geunsu Lee; Seung-Chan Moon
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Paper Abstract

Immersion materials have to overcome immersion-issues for successful wet process introduction to semiconductor mass production. Component-leaching issue is one of the most influential wet process huddles, which is related to immersion-liquid and projection lens contamination as well as resist patterning performances. In this paper, we will introduce our experimental results of leaching blocking effects resulted from the modification of polymer and additive structures and from the application of top surface blocking layers. PAG-leaching level of resist film formed of low Tg resin shows the highest meanwhile that of high Tg resin is the smallest leaching value. The interaction forces between additives and resin platforms are the most important to prevent additives leaching to immersion liquid. We have tested 3 different types of resin structures to modify the interaction forces between resin platform and resist components especially PAG molecules and photo-generated acid molecules. We changed 2-hydroxyethyl methacrylate(2-HEMA) contents to be 5, 10, 15% in our base resin, COMA-acrylate hybrid system to modify the hydrophilicity of resist platforms. By mimicking immersion process to obtain wet-performance of their resists we have obtained relative value of component-leaching. Interaction-force between resist platform and PAG was seemed to be largest when resist component-leaching is least so that the pattern profiles become to be vertical. It was appeared that the 5% 2-HEMA containing resin and TPS-Nonaflate PAG system showed the best performance because of its low leaching resulted from their strong interaction forces. Another polymer parameter to determine the component-diffusivity is glass transition temperature, Tg. Low Tg means high mobility of resin by small thermal energy due to high free volume contents inside of the resist film which can act as diffusion pathways of resist components. 10% MA resin system shows the lowest Tg, around 140 degrees C and the most serious T-topping profiles. Defectivity issue becomes more important in immersion process, which is most related to the partial leaching by residual water and resulted in watermark defects. We evaluated the relative easiness of watermark formation on different resist films by correlations between static and dynamic contact angles. We made 2 different resist films composed of 2 different water-repellent functional group monomers. Static contact angles of developer as well as DI water were measured. It was found indirectly that amphiphilicity of resist film surface makes positive effect on watermarks formation, that is, more hydrophobic and more developer-philic resist film remains less residual water droplets.

Paper Details

Date Published: 11 April 2006
PDF: 8 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615321 (11 April 2006); doi: 10.1117/12.655477
Show Author Affiliations
Jae Woo Lee, Dongjin Semichem. Co., Ltd. (South Korea)
Seung Keun Oh, Dongjin Semichem. Co., Ltd. (South Korea)
Jung Woo Kim, Dongjin Semichem. Co., Ltd. (South Korea)
Sang Hyang Lee, Dongjin Semichem. Co., Ltd. (South Korea)
Young Ho Jeong, Dongjin Semichem. Co., Ltd. (South Korea)
Sang Soo Kim, Dongjin Semichem. Co., Ltd. (South Korea)
Myoung Hwan Park, Dongjin Semichem. Co., Ltd. (South Korea)
Deogbae Kim, Dongjin Semichem. Co., Ltd. (South Korea)
Jaehyun Kim, Dongjin Semichem. Co., Ltd. (South Korea)
Geunsu Lee, Hynix Semiconductor Co., Ltd. (South Korea)
Seung-Chan Moon, Hynix Semiconductor Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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