Share Email Print
cover

Proceedings Paper

Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

To find resists having high resolution accompanied with good sensitivity and small LER is a big issue in EUV lithography to make path for volume manufacturing. We have started screening of resists by using high numerical aperture (NA) micro-exposure tool HiNA. Some of the results within 29 evaluated resists, including commercial and non-commercial, are presented with the consideration of relationship between optical conditions. The results obtained by another high NA micro-exposure tool MET located Berkeley National Laboratory are also shown and compared with the results by HiNA. In both exposure tools, down to 28 nm dense patterns were replicated but the LER was about 4 nm at best showing the requirement for further works

Paper Details

Date Published: 22 March 2006
PDF: 10 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 615107 (22 March 2006); doi: 10.1117/12.655106
Show Author Affiliations
Yukiko Kikuchi, Association of Super-Advanced Electronics Technologies (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Hiroaki Oizumi, Association of Super-Advanced Electronics Technologies (Japan)
Fumiaki Kumasaka, Association of Super-Advanced Electronics Technologies (Japan)
DooHoon Goo, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

© SPIE. Terms of Use
Back to Top