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Proceedings Paper

Real-time spatial control of steady-state wafer temperature during thermal processing in microlithography
Author(s): Arthur Tay; Weng-Khuen Ho; Ni Hu; Kuen-Yu Tsai; Ying Zhou
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Paper Abstract

An in-situ method to control the steady-state wafer temperature uniformity during thermal processing in microlithography is presented. Based on first principle thermal modeling of the thermal system, the temperature of the wafer can be estimated and controlled in real-time by monitoring the bake-plate temperature profile. This is useful as production wafers usually do not have temperature sensors embedded on it, these bake-plates are usually calibrated based on test wafers with embedded sensors. However as processes are subjected to process drifts, disturbances and wafer warpages, real-time correction of the bake-plate temperatures to achieve uniform wafer temperature at steady-state is not possible in current baking systems. Any correction is done based on run-to-run control techniques which depends on the sampling frequency of the wafers. Our approach is real-time and can correct for any variations in the desired steady-state wafer temperature. Experimental results demonstrate the feasibility of the approach.

Paper Details

Date Published: 10 March 2006
PDF: 10 pages
Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 61550A (10 March 2006); doi: 10.1117/12.654741
Show Author Affiliations
Arthur Tay, National Univ. of Singapore (Singapore)
Weng-Khuen Ho, National Univ. of Singapore (Singapore)
Ni Hu, National Univ. of Singapore (Singapore)
Kuen-Yu Tsai, National Taiwan Univ. (Taiwan)
Ying Zhou, Institute of Chemical and Engineering Sciences (Singapore)


Published in SPIE Proceedings Vol. 6155:
Data Analysis and Modeling for Process Control III
Iraj Emami; Kenneth W. Tobin, Editor(s)

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