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Proceedings Paper

Study of cross-linking reactions in negative-type thick-film resists
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Paper Abstract

This paper describes a study of a cross-linking reaction model for chemically amplified negative-type thick-film resists. Profile simulation is a major technique used to acquire experimental indicators. For this reason, numerous reports address simulation techniques, and many studies have focused in particular on chemically amplified positive-type resists, due to their role as mainstream resist materials used in the production of ICs. However, virtually no research has been performed on the profile simulation of chemically amplified negative-type thick-film resists. We measured the cross-linking reaction of a chemically amplified negative-type thick-film resist and created a new cross-linking reaction model. Our study demonstrates that this new model is more effective for thick-film resists than conventional models.

Paper Details

Date Published: 29 March 2006
PDF: 12 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533S (29 March 2006); doi: 10.1117/12.654166
Show Author Affiliations
Yoshihisa Sensu, Litho Tech Japan Corp. (Japan)
Atsushi Sekiguchi, Litho Tech Japan Corp. (Japan)
Yoshiyuki Kono, Litho Tech Japan Corp. (Japan)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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