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Proceedings Paper

Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays
Author(s): M. B. Reine; A. Hairston; P. Lamarre; K. K. Wong; S. P. Tobin; A. K. Sood; C. Cooke; M. Pophristic; S. Guo; B. Peres; R. Singh; C. R. Eddy; U. Chowdhury; M. M. Wong; R. D. Dupuis; T. Li; S. P. DenBaars
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Paper Abstract

This paper reports the development of aluminum-gallium nitride (AlGaN or AlxGa1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in backilluminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×1016 ohm, corresponding to R0A products of 7×1010 ohm-cm2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

Paper Details

Date Published: 23 February 2006
PDF: 15 pages
Proc. SPIE 6119, Semiconductor Photodetectors III, 611901 (23 February 2006); doi: 10.1117/12.653645
Show Author Affiliations
M. B. Reine, BAE Systems (United States)
A. Hairston, BAE Systems (United States)
P. Lamarre, BAE Systems (United States)
K. K. Wong, BAE Systems (United States)
S. P. Tobin, BAE Systems (United States)
A. K. Sood, BAE Systems (United States)
C. Cooke, BAE Systems (United States)
M. Pophristic, EMCORE Corp. (United States)
S. Guo, EMCORE Corp. (United States)
B. Peres, EMCORE Corp. (United States)
R. Singh, Boston Univ. (United States)
C. R. Eddy, Boston Univ. (United States)
U. Chowdhury, The Univ. of Texas at Austin (United States)
M. M. Wong, The Univ. of Texas at Austin (United States)
R. D. Dupuis, The Univ. of Texas at Austin (United States)
T. Li, Cree Lighting Co. (United States)
S. P. DenBaars, Cree Lighting Co. (United States)


Published in SPIE Proceedings Vol. 6119:
Semiconductor Photodetectors III
Marshall J. Cohen; Eustace L. Dereniak, Editor(s)

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