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Proceedings Paper

Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air
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Paper Abstract

This paper describes the low-temperature bonding of a lithium niobate (LiNbO3) waveguide chip to a silicon (Si) substrate for integrated optical systems. The bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au thin films (thickness: 100 nm) of the LiNbO3 chip and the Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. The bonded chips fractured at bonding temperature higher than 150°C because of the coefficient of thermal expansion (CTE) mismatch. The LiNbO3 chips were successfully bonded to the Si substrates at relatively low temperature (100°C). The die-shear strength of the LiNbO3 chip was estimated to be more than 12 kg (3.8 MPa), the upper limit of our shear testing equipment.

Paper Details

Date Published: 6 December 2005
PDF: 6 pages
Proc. SPIE 6050, Optomechatronic Micro/Nano Devices and Components, 605012 (6 December 2005); doi: 10.1117/12.653072
Show Author Affiliations
Ryo Takigawa, The Univ. of Tokyo (Japan)
Eiji Higurashi, The Univ. of Tokyo (Japan)
Tadatomo Suga, The Univ. of Tokyo (Japan)
Satoshi Shinada, National Institute of Information and Communications Technology (Japan)
Tetsuya Kawanishi, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 6050:
Optomechatronic Micro/Nano Devices and Components

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