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Proceedings Paper

Characterization of the noise spectrum of laterally coupled diode lasers
Author(s): H. Lamela; R. Santos; C. Roda; P. Acedo
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Paper Abstract

The study of noise spectrum, in particular of the RIN, in semiconductor diodes lasers is a powerful tool to determine the proper frequencies and the operation regimes of the device. Following this a study of the RIN is of major importance to characterize the laterally coupled diode lasers. In this work a study of the noise spectrum dependence with the lateral separation between waveguides as well as its dependence with relative bias current applied is made. These results combined and compared with spectrally resolved near and far field allows the definition of which are the operating regimes of the device.

Paper Details

Date Published: 28 February 2006
PDF: 6 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611528 (28 February 2006); doi: 10.1117/12.652349
Show Author Affiliations
H. Lamela, Univ. Carlos III de Madrid (Spain)
R. Santos, Univ. Carlos III de Madrid (Spain)
C. Roda, Univ. Carlos III de Madrid (Spain)
P. Acedo, Univ. Carlos III de Madrid (Spain)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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