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Proceedings Paper

Time-resolved photoluminescence studies of Mg-doped AlN epilayers
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Paper Abstract

Mg-doped AlN epilayers grown by metalorganic chemical vapor deposition have been studied by deep UV time-resolved photoluminescence (PL) spectroscopy. A PL emission line at 6.02 eV has been observed at 10 K in Mgdoped AlN, which is about 40 meV below the free-exciton (FX) transition in undoped AlN epilayer. Temperature dependent measurement of the PL intensity of this emission line also reveals a binding energy of 40 meV. This transition line is believed to be due to the recombination of an exciton bound to neutral Mg acceptor (I1) with a binding energy, Ebx of 40 meV. The recombination lifetime of the I1 transition in Mg doped AlN have been measured to be 130 ps, which is close to the expected value. Excitation intensity dependence of time-resolved PL for Mg-doped AlN epilayer is also measured to understand carrier and exciton dynamics.

Paper Details

Date Published: 15 February 2006
PDF: 7 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180E (15 February 2006); doi: 10.1117/12.651856
Show Author Affiliations
N. Nepal, Kansas State Univ. (United States)
M. L. Nakarmi, Kansas State Univ. (United States)
J. Y. Lin, Kansas State Univ. (United States)
H. X. Jiang, Kansas State Univ. (United States)


Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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