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Proceedings Paper

Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN
Author(s): K. T. Tsen; C. Poweleit; D. K. Ferry; Hai Lu; William J. Schaff
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Paper Abstract

Transient Raman spectroscopy has been used to study electron transport in a thick InN film grown on GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity in the Γ valley, which reaches as high as 7.5x107 cm/sec, can exceed its steady state value by as much as 40%. Electron velocities have been found to cut off at around 2x108 cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. Our experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.

Paper Details

Date Published: 15 February 2006
PDF: 13 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180D (15 February 2006); doi: 10.1117/12.651190
Show Author Affiliations
K. T. Tsen, Arizona State Univ. (United States)
C. Poweleit, Arizona State Univ. (United States)
D. K. Ferry, Arizona State Univ. (United States)
Hai Lu, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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