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Proceedings Paper

Advances in high brightness semiconductor lasers
Author(s): R. M. Lammert; S. W. Oh; M. L. Osowski; C. Panja; P. T. Rudy; T. S. Stakelon; J. E. Ungar
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Paper Abstract

We review recent advances in high power semiconductor lasers including increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power bars at eye-safe wavelengths are presented. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

Paper Details

Date Published: 15 February 2006
PDF: 12 pages
Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040I (15 February 2006); doi: 10.1117/12.651148
Show Author Affiliations
R. M. Lammert, Quintessence Photonics Corp. (United States)
S. W. Oh, Quintessence Photonics Corp. (United States)
M. L. Osowski, Quintessence Photonics Corp. (United States)
C. Panja, Quintessence Photonics Corp. (United States)
P. T. Rudy, Quintessence Photonics Corp. (United States)
T. S. Stakelon, Quintessence Photonics Corp. (United States)
J. E. Ungar, Quintessence Photonics Corp. (United States)

Published in SPIE Proceedings Vol. 6104:
High-Power Diode Laser Technology and Applications IV
Mark S. Zediker, Editor(s)

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